Photoelectrochemical solar energy conversion based on blend of poly(3-hexylthiophene) and fullerene
Identifieur interne : 008631 ( Main/Repository ); précédent : 008630; suivant : 008632Photoelectrochemical solar energy conversion based on blend of poly(3-hexylthiophene) and fullerene
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Abstract
A solid-state photoelectrochemical solar energy conversion device based on blend of poly(3-hexylthiophene) (P3HT) and fullerene (C60) has been constructed and characterized. The photoelectrochemical performance parameters of the device were compared with pure P3HT solid-state photoelectrochemical cell. The current-voltage characteristics in the dark and under white light illumination and photocurrent spectra for front- and backside illuminations have been studied. The following device parameters were obtained: an open-circuit voltage of 97.8mV and a short-circuit current of 7.28 μA/cm2 at light intensity of 100mW/cm2; IPCE% of 0.43% for front side illumination (ITO/PEDOT) and IPCE% of 0.01% for backside illumination (ITO/P3HT:C60). The dependence of the short-circuit current and an open-circuit voltage on the light intensity and time have also been studied.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Photoelectrochemical solar energy conversion based on blend of poly(3-hexylthiophene) and fullerene</title><author><name sortKey="Mengesha, Ushula" uniqKey="Mengesha U">Ushula Mengesha</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemistry, Bahir Dar University, P.O. Box 79</s1><s2>Bahir Dar</s2><s3>ETH</s3><sZ>1 aut.</sZ></inist:fA14><country>Éthiopie</country><wicri:noRegion>Bahir Dar</wicri:noRegion></affiliation></author><author><name sortKey="Yohannes, Teketel" uniqKey="Yohannes T">Teketel Yohannes</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Chemistry, Addis Ababa University, P.O. Box 1176</s1><s2>Addis Ababa</s2><s3>ETH</s3><sZ>2 aut.</sZ></inist:fA14><country>Éthiopie</country><wicri:noRegion>Addis Ababa</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">06-0535945</idno><date when="2006">2006</date><idno type="stanalyst">PASCAL 06-0535945 INIST</idno><idno type="RBID">Pascal:06-0535945</idno><idno type="wicri:Area/Main/Corpus">008538</idno><idno type="wicri:Area/Main/Repository">008631</idno></publicationStmt><seriesStmt><idno type="ISSN">0927-0248</idno><title level="j" type="abbreviated">Sol. energy mater. sol. cells</title><title level="j" type="main">Solar energy materials and solar cells</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Fullerenes</term><term>Indium Tin Oxides</term><term>Open circuit voltage</term><term>Organic solar cells</term><term>Performance</term><term>Photoelectrochemical device</term><term>Short circuit currents</term><term>Thiophene derivative polymer</term><term>Voltage current curve</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Cellule solaire organique</term><term>Fullerènes</term><term>Thiophène dérivé polymère</term><term>Dispositif photoélectrochimique</term><term>Performance</term><term>Indium Etain Oxyde</term><term>Caractéristique courant tension</term><term>Tension circuit ouvert</term><term>Courant court circuit</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A solid-state photoelectrochemical solar energy conversion device based on blend of poly(3-hexylthiophene) (P3HT) and fullerene (C<sub>60</sub>) has been constructed and characterized. The photoelectrochemical performance parameters of the device were compared with pure P3HT solid-state photoelectrochemical cell. The current-voltage characteristics in the dark and under white light illumination and photocurrent spectra for front- and backside illuminations have been studied. The following device parameters were obtained: an open-circuit voltage of 97.8mV and a short-circuit current of 7.28 μA/cm<sup>2</sup> at light intensity of 100mW/cm<sup>2</sup>; IPCE% of 0.43% for front side illumination (ITO/PEDOT) and IPCE% of 0.01% for backside illumination (ITO/P3HT:C<sub>60</sub>). The dependence of the short-circuit current and an open-circuit voltage on the light intensity and time have also been studied.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0927-0248</s0></fA01><fA03 i2="1"><s0>Sol. energy mater. sol. cells</s0></fA03><fA05><s2>90</s2></fA05><fA06><s2>20</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Photoelectrochemical solar energy conversion based on blend of poly(3-hexylthiophene) and fullerene</s1></fA08><fA11 i1="01" i2="1"><s1>MENGESHA (Ushula)</s1></fA11><fA11 i1="02" i2="1"><s1>YOHANNES (Teketel)</s1></fA11><fA14 i1="01"><s1>Department of Chemistry, Bahir Dar University, P.O. Box 79</s1><s2>Bahir Dar</s2><s3>ETH</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Chemistry, Addis Ababa University, P.O. Box 1176</s1><s2>Addis Ababa</s2><s3>ETH</s3><sZ>2 aut.</sZ></fA14><fA20><s1>3508-3519</s1></fA20><fA21><s1>2006</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>18016</s2><s5>354000142951910030</s5></fA43><fA44><s0>0000</s0><s1>© 2006 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>53 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>06-0535945</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Solar energy materials and solar cells</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>A solid-state photoelectrochemical solar energy conversion device based on blend of poly(3-hexylthiophene) (P3HT) and fullerene (C<sub>60</sub>) has been constructed and characterized. The photoelectrochemical performance parameters of the device were compared with pure P3HT solid-state photoelectrochemical cell. The current-voltage characteristics in the dark and under white light illumination and photocurrent spectra for front- and backside illuminations have been studied. The following device parameters were obtained: an open-circuit voltage of 97.8mV and a short-circuit current of 7.28 μA/cm<sup>2</sup> at light intensity of 100mW/cm<sup>2</sup>; IPCE% of 0.43% for front side illumination (ITO/PEDOT) and IPCE% of 0.01% for backside illumination (ITO/P3HT:C<sub>60</sub>). The dependence of the short-circuit current and an open-circuit voltage on the light intensity and time have also been studied.</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Cellule solaire organique</s0><s5>05</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Organic solar cells</s0><s5>05</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Fullerènes</s0><s5>06</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Fullerenes</s0><s5>06</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Thiophène dérivé polymère</s0><s2>NK</s2><s5>07</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Thiophene derivative polymer</s0><s2>NK</s2><s5>07</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Tiofeno derivado polímero</s0><s2>NK</s2><s5>07</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Dispositif photoélectrochimique</s0><s5>08</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Photoelectrochemical device</s0><s5>08</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Dispositivo fotoelectroquímico</s0><s5>08</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Performance</s0><s5>09</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Performance</s0><s5>09</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Rendimiento</s0><s5>09</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Indium Etain Oxyde</s0><s2>NC</s2><s2>FX</s2><s2>NA</s2><s5>10</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Indium Tin Oxides</s0><s2>NC</s2><s2>FX</s2><s2>NA</s2><s5>10</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Indio Estaño Óxido</s0><s2>NC</s2><s2>FX</s2><s2>NA</s2><s5>10</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Caractéristique courant tension</s0><s5>11</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Voltage current curve</s0><s5>11</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Característica corriente tensión</s0><s5>11</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Tension circuit ouvert</s0><s5>13</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Open circuit voltage</s0><s5>13</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Courant court circuit</s0><s5>14</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Short circuit currents</s0><s5>14</s5></fC03><fN21><s1>353</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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